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au.\*:("TABORYSKI, R")

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Weak localisation and electron-electron interaction in modulation-doped GaAs/AlGaAs heterostructuresTABORYSKI, R; LINDELOF, P. E.Semiconductor science and technology. 1990, Vol 5, Num 9, pp 933-946, issn 0268-1242, 14 p.Article

Quantum corrections to conductivity observed at intermediate magnetic fields in a high-mobility GaAs/AlxGa1-xAs two-dimensional electron gasTABORYSKI, R; VEJE, E; LINDELOF, P. E et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 5, pp 3287-3290, issn 0163-1829Article

Weak localization in a GaAs heterostructure close to population of the second subbandHANSEN, J. E; TABORYSKI, R; LINDELOF, P. E et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 23, pp 16040-16043, issn 0163-1829Article

Vector-asymmetry of the quantum point contact conductanceTABORYSKI, R; GEIM, A. K; LINDELOF, P. E et al.Superlattices and microstructures. 1992, Vol 12, Num 1, pp 137-140, issn 0749-6036Article

Localization and interaction effects in GaAs/AlGaAs heterostructures modified by 4He-ion implantationTABORYSKI, R; VEJE, E; LINDELOF, P. E et al.Surface science. 1990, Vol 229, Num 1-3, pp 105-109, issn 0039-6028, 5 p.Conference Paper

Formation of sharp potential minima close to a quantum point contact by impinging alpha particlesTABORYSKI, R; BAKLANOV, K; LINDELOF, P. E et al.Physical review letters. 1993, Vol 70, Num 16, pp 2475-2478, issn 0031-9007Article

Superconductor-semiconductor-superconductor planar junctions of aluminium on δ-doped gallium-arsenideTABORYSKI, R; CLAUSEN, T; KUTCHINSKY, J et al.IEEE transactions on applied superconductivity. 1997, Vol 7, Num 2, pp 2809-2813, issn 1051-8223, 3Conference Paper

Magnetoresistance of a two-dimensional electron gas in random magnetic fieldsHANSEN, L. T; TABORYSKI, R; SMITH, A et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 349-352, issn 0039-6028Conference Paper

Observation of the i=1/2 fractional quantum Hall plateau in AlGaAs/GaAs/AlGaAs selectively doped double heterostructuresLINDELOF, P. E; BRUUS, H; TABORYSKI, R et al.Semiconductor science and technology. 1989, Vol 4, Num 10, pp 858-865, issn 0268-1242, 8 p.Article

Resonant tunnelling between edge states in mesoscopic wiresGEIM, A. K; MAIN, P. C; BROWN, C. V et al.Surface science. 1994, Vol 305, Num 1-3, pp 624-628, issn 0039-6028Conference Paper

Rrflection of ballistic electrons by diffusive two-dimensional contactsGEIM, A. K; MAIN, P. C; TABORYSKI, R et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1005-1009, issn 0038-1101Conference Paper

Multiple Andreev reflections in diffusive SNS structuresTABORYSKI, R; KUTCHINSKY, J; HANSEN, J. B et al.Superlattices and microstructures. 1999, Vol 25, Num 5-6, pp 829-837, issn 0749-6036Article

Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometerKUTCHINSKY, J; TABORYSKI, R; HANSEN, J. B et al.IEEE transactions on applied superconductivity. 1999, Vol 9, Num 2, pp 4249-4252, issn 1051-8223, 3Conference Paper

High-field magnetoresistance in a periodically modulated two-dimensional electron gasGEIM, A. K; TABORYSKI, R; KRISTENSEN, A et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 7, pp 4324-4327, issn 0163-1829Article

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